Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition
Identifieur interne : 000243 ( Main/Exploration ); précédent : 000242; suivant : 000244Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition
Auteurs : Sana Ben Amor [Tunisie] ; Wissem Dimassi [Tunisie] ; Mohamed Ali Tebai [Tunisie] ; Hatem Ezzaouia [Tunisie]Source :
- physica status solidi c [ 1862-6351 ] ; 2012-10.
English descriptors
Abstract
Hydrogenated amorphous silicon (a‐Si:H) thin films were deposited from pure silane (SiH4) and hydrogen (H2) gas mixture by plasma enhanced chemical vapor deposition (PECVD) method at low temperature (400 °C) using high rf power (60 W). The structural and optical properties of these films are systematically investigated as a function of the flow rate of hydrogen (F H 2).The surface morphology is analyzed by atomic force microscopy (AFM). The characterization of these films with low angle X‐ray diffraction revealed that the crystallite size in the films tends to decrease with increase in (F H 2). The Fourier transform infrared (FTIR) spectroscopic analysis showed that at low values of (F H 2), the hydrogen is predominantly incorporated in Si:H films in di‐hydrogen (Si‐H2) and (Si‐H2)n complexes. However, with increasing (F H 2) the hydrogen bonding in Si:H films shifts from di‐hydrogen (Si‐H2) and (Si‐H2)n complexes to the mono‐hydrogen (Si‐H) bonding configuration. Finally, for these optimized conditions, the deposition rate decreases with increasing F H 2 (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Url:
DOI: 10.1002/pssc.201200238
Affiliations:
Links toward previous steps (curation, corpus...)
- to stream Istex, to step Corpus: 000F29
- to stream Istex, to step Curation: 000B10
- to stream Istex, to step Checkpoint: 000067
- to stream Main, to step Merge: 000248
- to stream Main, to step Curation: 000243
Le document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title xml:lang="en">Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition</title><author><name sortKey="Ben Amor, Sana" sort="Ben Amor, Sana" uniqKey="Ben Amor S" first="Sana" last="Ben Amor">Sana Ben Amor</name></author><author><name sortKey="Dimassi, Wissem" sort="Dimassi, Wissem" uniqKey="Dimassi W" first="Wissem" last="Dimassi">Wissem Dimassi</name></author><author><name sortKey="Ali Tebai, Mohamed" sort="Ali Tebai, Mohamed" uniqKey="Ali Tebai M" first="Mohamed" last="Ali Tebai">Mohamed Ali Tebai</name></author><author><name sortKey="Ezzaouia, Hatem" sort="Ezzaouia, Hatem" uniqKey="Ezzaouia H" first="Hatem" last="Ezzaouia">Hatem Ezzaouia</name></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:D716224DFA7F9A48547BC9F0BD3BD36706368750</idno><date when="2012" year="2012">2012</date><idno type="doi">10.1002/pssc.201200238</idno><idno type="url">https://api.istex.fr/document/D716224DFA7F9A48547BC9F0BD3BD36706368750/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">000F29</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">000F29</idno><idno type="wicri:Area/Istex/Curation">000B10</idno><idno type="wicri:Area/Istex/Checkpoint">000067</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Checkpoint">000067</idno><idno type="wicri:doubleKey">1862-6351:2012:Ben Amor S:effect:of:the</idno><idno type="wicri:Area/Main/Merge">000248</idno><idno type="wicri:Area/Main/Curation">000243</idno><idno type="wicri:Area/Main/Exploration">000243</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a" type="main" xml:lang="en">Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition</title><author><name sortKey="Ben Amor, Sana" sort="Ben Amor, Sana" uniqKey="Ben Amor S" first="Sana" last="Ben Amor">Sana Ben Amor</name><affiliation wicri:level="1"><country xml:lang="fr">Tunisie</country><wicri:regionArea>Photovoltaic Laboratory Research and Technology Centre of Energy, Borj‐Cedria Science and Technology Park, BP 95, 2050 Hammam‐Lif</wicri:regionArea><wicri:noRegion>2050 Hammam‐Lif</wicri:noRegion></affiliation><affiliation></affiliation></author><author><name sortKey="Dimassi, Wissem" sort="Dimassi, Wissem" uniqKey="Dimassi W" first="Wissem" last="Dimassi">Wissem Dimassi</name><affiliation wicri:level="1"><country xml:lang="fr">Tunisie</country><wicri:regionArea>Photovoltaic Laboratory Research and Technology Centre of Energy, Borj‐Cedria Science and Technology Park, BP 95, 2050 Hammam‐Lif</wicri:regionArea><wicri:noRegion>2050 Hammam‐Lif</wicri:noRegion></affiliation></author><author><name sortKey="Ali Tebai, Mohamed" sort="Ali Tebai, Mohamed" uniqKey="Ali Tebai M" first="Mohamed" last="Ali Tebai">Mohamed Ali Tebai</name><affiliation wicri:level="1"><country xml:lang="fr">Tunisie</country><wicri:regionArea>Photovoltaic Laboratory Research and Technology Centre of Energy, Borj‐Cedria Science and Technology Park, BP 95, 2050 Hammam‐Lif</wicri:regionArea><wicri:noRegion>2050 Hammam‐Lif</wicri:noRegion></affiliation></author><author><name sortKey="Ezzaouia, Hatem" sort="Ezzaouia, Hatem" uniqKey="Ezzaouia H" first="Hatem" last="Ezzaouia">Hatem Ezzaouia</name><affiliation wicri:level="1"><country xml:lang="fr">Tunisie</country><wicri:regionArea>Photovoltaic Laboratory Research and Technology Centre of Energy, Borj‐Cedria Science and Technology Park, BP 95, 2050 Hammam‐Lif</wicri:regionArea><wicri:noRegion>2050 Hammam‐Lif</wicri:noRegion></affiliation></author></analytic><monogr></monogr><series><title level="j">physica status solidi c</title><title level="j" type="abbrev">Phys. Status Solidi C</title><idno type="ISSN">1862-6351</idno><idno type="eISSN">1610-1642</idno><imprint><publisher>WILEY‐VCH Verlag</publisher><pubPlace>Berlin</pubPlace><date type="published" when="2012-10">2012-10</date><biblScope unit="volume">9</biblScope><biblScope unit="issue">10‐11</biblScope><biblScope unit="page" from="2180">2180</biblScope><biblScope unit="page" to="2183">2183</biblScope></imprint><idno type="ISSN">1862-6351</idno></series><idno type="istex">D716224DFA7F9A48547BC9F0BD3BD36706368750</idno><idno type="DOI">10.1002/pssc.201200238</idno><idno type="ArticleID">PSSC201200238</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">1862-6351</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>PECVD</term><term>hydrogen flow rate</term><term>hydrogenated amorphous silicon</term></keywords></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Hydrogenated amorphous silicon (a‐Si:H) thin films were deposited from pure silane (SiH4) and hydrogen (H2) gas mixture by plasma enhanced chemical vapor deposition (PECVD) method at low temperature (400 °C) using high rf power (60 W). The structural and optical properties of these films are systematically investigated as a function of the flow rate of hydrogen (F H 2).The surface morphology is analyzed by atomic force microscopy (AFM). The characterization of these films with low angle X‐ray diffraction revealed that the crystallite size in the films tends to decrease with increase in (F H 2). The Fourier transform infrared (FTIR) spectroscopic analysis showed that at low values of (F H 2), the hydrogen is predominantly incorporated in Si:H films in di‐hydrogen (Si‐H2) and (Si‐H2)n complexes. However, with increasing (F H 2) the hydrogen bonding in Si:H films shifts from di‐hydrogen (Si‐H2) and (Si‐H2)n complexes to the mono‐hydrogen (Si‐H) bonding configuration. Finally, for these optimized conditions, the deposition rate decreases with increasing F H 2 (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</div></front></TEI><affiliations><list><country><li>Tunisie</li></country></list><tree><country name="Tunisie"><noRegion><name sortKey="Ben Amor, Sana" sort="Ben Amor, Sana" uniqKey="Ben Amor S" first="Sana" last="Ben Amor">Sana Ben Amor</name></noRegion><name sortKey="Ali Tebai, Mohamed" sort="Ali Tebai, Mohamed" uniqKey="Ali Tebai M" first="Mohamed" last="Ali Tebai">Mohamed Ali Tebai</name><name sortKey="Dimassi, Wissem" sort="Dimassi, Wissem" uniqKey="Dimassi W" first="Wissem" last="Dimassi">Wissem Dimassi</name><name sortKey="Ezzaouia, Hatem" sort="Ezzaouia, Hatem" uniqKey="Ezzaouia H" first="Hatem" last="Ezzaouia">Hatem Ezzaouia</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/Terre/explor/NickelMaghrebV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000243 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000243 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Wicri/Terre
|area= NickelMaghrebV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= ISTEX:D716224DFA7F9A48547BC9F0BD3BD36706368750
|texte= Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition
}}
| This area was generated with Dilib version V0.6.27. |  |